About this book

Electrostatic discharge (ESD) continues to impact semiconductor components and systems as technologies scale from micro- to nano-electronics.

This book studies electrical overstress, ESD, and latchup from a whole-chip ESD design synthesis approach. It provides a clear insight into the integration of ESD protection networks from a generalist perspective, followed by examples in specific technologies, circuits, and chips. Uniquely both the semiconductor chip integration issues and floorplanning of ESD networks are covered from a ‘top-down’ design approach.
Look inside for extensive coverage on:

• integration of cores, power bussing, and signal pins in DRAM, SRAM, CMOS image processing chips, microprocessors, analog products, RF components and how the integration influences ESD design and integration
• architecturing of mixed voltage, mixed signal, to RF design for ESD analysis
• floorplanning for peripheral and core I/O designs, and the implications on ESD and latchup
• guard ring integration for both a ‘bottom-up’ and ‘top-down’ methodology addressing I/O guard rings, ESD guard rings, I/O to I/O, and I/O to core
• classification of ESD power clamps and ESD signal pin circuitry, and how to make the correct choice for a given semiconductor chip

• examples of ESD design for the state-of-the-art technologies discussed, including CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, and smart power
• practical methods for the understanding of ESD circuit power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics

ESD: Design and Synthesis is a continuation of the author’s series of books on ESD protection. It is an essential reference for: ESD, circuit, and semiconductor engineers; design synthesis team leaders; layout design, characterisation, floorplanning, test and reliability engineers; technicians; and groundrule and test site developers in the manufacturing and design of semiconductor chips.

It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, and manufacturing sciences, and on courses involving the design of ESD devices, chips and systems. This book offers a useful insight into the issues that confront modern technology as we enter the nano-electronic era.

About the Author

Dr Steven H. Voldman received his B.S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T; MS Engineering Physics (1986) and Ph.D EE (1991) from the University of Vermont under IBM’s Resident Study Fellow Program. At M.I.T, he worked as a member of the M.I.T. Plasma Fusion Center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability device engineer, his work include pioneering work in bipolar/ CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechanism, hot electron, epitaxy/well design, CMOS latchup, and ESD. Since 1986, he has been responsible for defining the IBM ESD/latchup strategy for CMOS, SOI, BiCMOS and RF CMOS and SiGe technologies. He has authored ESD and latchup publications in the area of MOSFET Scaling, device simulations, copper, low-k, MR heads, CMOS, SOI , Sage and SiGeC technology. Voldman served as SEMATECH ESD Working Group Chairman (1996-2000), ESD Association General Chairman and Board of Directors, International  Reliability Physics (IRPS) ESD/Latchup Chairman, International Physical and Failure Analysis (IPFA) Symposium ESD Sub-Committee Chairman, ESD Association Standard Development Chairman on Transmission Line Pulse Testing, ESD Education  Committee, and serves on the ISQED Committee, Taiwan ED Conference (T-ESDC) Technical Program Committee. Voldman has provided ESD lectures for universities (e.g. MIT Lecture Series, Taiwan National Chiao-Tung University, and Singapore Nanyang Technical University). He is a recipient of over 125 US patents, over 100 publications, and also provides talks on patenting, and invention. He has been featured in EE Times, Intellectual Property Law and Business and authored the first article on ESD phenomena for the October 2002  edition of  Scientific American entitled Lightening Rods for Nanostructures, and Pour La Science, Le Scienze, and Swiat Nauk international editions. Dr. Voldman was recently accepted as the first IEEE Fellow for ESD phenomena in semiconductors for ‘ contributions to electrostatic discharge protection CMOS, SOI and SiGe technologies’.

Table of contents

About the Author.

Preface.

Acknowledgements.

1. Electrostatics and Electrothermal Physics.

2. Electrothermal and Methods of Analysis ESD Models.

3. Semiconductor Device Physics and ESD.

4. Substrates and ESD.

ISBN:- 978-0-470-68571-6

5. Wells and Sub-collectors and ESD.

6. Isolation Technology and ESD.

7. Drain Engineering, Salicides and ESD.

8. Dielectrics and ESD.

9. Interconnects and ESD.

10. Silicon on Insulator (SOI) and ESD.

11. Silicon-Germanium and ESD.

12. Nanostructures and ESD.

Index.

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